Extreme-low k porous pSiCOH dielectrics prepared by PECVD
- H. You
- Petra Mennell
- et al.
- 2018
- JVSTB
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45 results for Anita Madan
Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
- Shogo Mochizuki
- Conal E. Murray
- et al.
- 2017
- Journal of Applied Physics
High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
- David Cooper
- N. Bernier
- et al.
- 2017
- Applied Physics Letters
Optimizing ULK film properties to enable BEOL integration with TDDB reliability
- E. T. Ryan
- Deepika Priyadarshini
- et al.
- 2015
- IITC/MAM 2015
ALD TaN barrier for enhanced performance with low contact resistance for 14 nm Technology Node Cu Interconnects
- Joyeeta Nag
- Brian A. Cohen
- et al.
- 2015
- ECS Meeting 2015 Phoenix
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- Tenko Yamashita
- S. Mehta
- et al.
- 2015
- VLSI Technology 2015
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
Multitechnique metrology methods for evaluating pitch walking in 14 nm and beyond FinFETs
- Robin Chao
- Kriti K. Kohli
- et al.
- 2014
- J. Micro/Nanolithogr. MEMS MOEMS
Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- K. Cheng
- S.-C. Seo
- et al.
- 2014
- VLSI Technology 2014