Gate length and performance scaling of undoped-body extremely thin SOI MOSFETs
- Amlan Majumdar
- Xinlin Wang
- et al.
- 2009
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
49 results for Amlan Majumdar
Mobility scaling in short-channel length strained Ge-on-insulator P-MOSFETs
- Stephen W. Bedell
- Amlan Majumdar
- et al.
- 2008
- IEEE Electron Device Letters
High-performance undoped-body 8-nm-thin SOI field-effect transistors
- Amlan Majumdar
- Zhibin Ren
- et al.
- 2008
- IEEE Electron Device Letters
CMOS compatible high performance IIIV devices: Opportunities and challenges
- Yanning Sun
- Kuen-Ting Shiu
- et al.
- 2016
- ECS Meeting 2016
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
Electron mobility in thin In0.53Ga0.47As channel
- Eduard Cartier
- Amlan Majumdar
- et al.
- 2017
- ESSDERC 2017
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- ECSSMEQ 2014
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Circuits 2013