Molecular Interactions in Copper Chemical Mechanical Planarization: A Phenomenological Study
- Mahadevaiyer Krishnan
- Donald F. Canaperi
- et al.
- 2024
- ECS J. Solid State Sci. Technol.
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20 results for M. Krishnan
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- V. Djara
- Veeresh Deshpande
- et al.
- 2015
- VLSI Technology 2015
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
CVD-Co/Cu(Mn) integration and reliability for 10 nm node
- Takeshi Nogami
- M. He
- et al.
- 2013
- IITC 2013
Attachment of silica and alumina nanoparticles as studied by QCM
- A. Hanel
- Jakub Nalaskowski
- et al.
- 2012
- CEE 2012
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
- U. Kwon
- K. Wong
- et al.
- 2012
- VLSI Technology 2012
Effects of chemical mechanical polishing on a porous SiCOH dielectric
- S. Gates
- S. Papa Rao
- et al.
- 2012
- Microelectronic Engineering
Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
- Timothy J. Mcardle
- Jack O. Chu
- et al.
- 2011
- Applied Physics Letters
Chemical mechanical planarization: Slurry chemistry, materials, and mechanisms
- Mahadevaiyer Krishnan
- Jakub W. Nalaskowski
- et al.
- 2009
- Chemical Reviews