Mechanism of VFB / VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices
- Tackhwi Lee
- Kisik Choi
- et al.
- 2011
- Journal of Vacuum Science and Technology B
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46 results for Dae-Gyu Park
Hysteretic drain-current behavior due to random telegraph noise in scaled-down FETs with high-κ/metal-gate stacks
- Hiroshi Miki
- Naoki Tega
- et al.
- 2010
- IEDM 2010
Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control
- Kam-Leung Lee
- Isaac Lauer
- et al.
- 2010
- IWJT 2010
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
High-κ gate dielectrics for nanoscale CMOS devices: Status, challenges, and future
- Dae-Gyu Park
- Xinlin Wang
- 2010
- ECS Transactions
FinFET resistance mitigation through design and process optimization
- Cindy Wang
- Josephine Chang
- et al.
- 2009
- VLSI-TSA 2009
High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
- D.-G. Park
- K. Stein
- et al.
- 2009
- VLSI-TSA 2009
Reduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETs
- N. Tega
- H. Miki
- et al.
- 2009
- IEDM 2009
Copper contact metallization using Ru-based barrier liners for 45 nm and 32 nm nodes: Reliability and device performance
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008