J.A. Felix, M.R. Shaneyfelt, et al.
IEEE TNS
An extremely low contact resistivity of 6-7 × 10-9 Ωċcm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics. © 2010 IEEE.
J.A. Felix, M.R. Shaneyfelt, et al.
IEEE TNS
E. Gusev, C. Cabral Jr., et al.
Microelectronic Engineering
Gregory Fritz, Adam Pyzyna, et al.
ADMETA 2012
Zhen Zhang, Bin Yang, et al.
Applied Physics Letters