Jun Luo, Zhi-Jun Qiu, et al.
Journal of Vacuum Science and Technology B
An extremely low contact resistivity of 6-7 × 10-9 Ωċcm2 between Ni0.9Pt0.1Si and heavily doped Si is achieved through Schottky barrier engineering by dopant segregation. In this scheme, the implantation of B or As is performed into silicide followed by a low-temperature drive-in anneal. Reduction of effective Schottky barrier height is manifested in the elimination of nonlinearities in IV characteristics. © 2010 IEEE.
Jun Luo, Zhi-Jun Qiu, et al.
Journal of Vacuum Science and Technology B
M. Yang, M. Ieong, et al.
IEDM 2003
J.A. Felix, M.R. Shaneyfelt, et al.
IEEE TNS
L.J. Huang, J.O. Chu, et al.
VLSI Technology 2001