Interfacial reaction between amorphous silicon and palladium thin films
- H.T.G. Hentzell
- P.A. Psaras
- et al.
- 1985
- Materials Letters
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Electronic structure and properties of silicon-transition metal interfaces
- O. Bisi
- L.W. Chiao
- et al.
- 1985
- Surface Science
Effect of dopant on reaction between polycrystalline silicon and thin-film rhodium
- P.A. Psaras
- R.D. Thompson
- et al.
- 1985
- Applied Physics Letters
Tungsten-platinum alloy Schottky barriers on n-type GaAs
- T. Okumura
- K.N. Tu
- 1985
- Applied Physics Letters
Structure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substrates
- P.A. Psaras
- R.D. Thompson
- et al.
- 1984
- Journal of Applied Physics
Two-step Al/Ti metallization to PtSi/Si structures
- M. Eizenberg
- K.N. Tu
- et al.
- 1984
- Applied Physics Letters
Electronic structure and properties of Ni-Si(001) and Ni-Si(111) reactive interfaces
- O. Bisi
- L.W. Chiao
- et al.
- 1984
- Physical Review B
Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation
- M. Wittmer
- K.N. Tu
- 1984
- Physical Review B
Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers
- P.A. Psaras
- M. Eizenberg
- et al.
- 1984
- Journal of Applied Physics
Summary Abstract: Current metallization issues in microelectronic devices
- K.N. Tu
- 1984
- JVSTA