New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85oC and High Endurance 3D Crosspoint Memory
- Michelle Cheng
- Alexander Grun
- et al.
- 2022
- IEDM 2022
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89 results for Robert L. Bruce
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Temperature sensitivity of analog in-memory computing using phase-change memory
- Irem Boybat-Kara
- Benedikt Kersting
- et al.
- 2021
- IEDM 2021
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory
- Huai-Yu Cheng
- Wei-Chih Chien
- et al.
- 2021
- IEDM 2021
Precision of synaptic weights programmed in phase-change memory devices for deep learning inference
- S. R. Nandakumar
- Irem Boybat
- et al.
- 2020
- IEDM 2020
High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy
- S. Lee
- Cheng-Wei Cheng
- et al.
- 2018
- IEDM 2018
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
- W. Chien
- Huai-Yu Cheng
- et al.
- 2016
- IEDM 2016
Flip chip assembly with sub-micron 3D re-alignment via solder surface tension
- Jae Woong Nah
- Yves Martin
- et al.
- 2015
- ECTC 2015