Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors
- Kang Yi Lin
- Chen Li
- et al.
- 2018
- JVSTA
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89 results for Robert L. Bruce
Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes
- Hiroyuki Miyazoe
- Nathan Marchack
- et al.
- 2018
- JVSTB
Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applications
- Nathan Marchack
- Hiroyuki Miyazoe
- et al.
- 2018
- JVSTB
Polymer etching by atmospheric-pressure plasma jet and surface micro-discharge sources: Activation energy analysis and etching directionality
- Andrew J. Knoll
- Pingshan Luan
- et al.
- 2018
- Plasma Processes and Polymers
Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer
- Sebastian U. Engelmann
- Robert L. Bruce
- et al.
- 2017
- JVSTB
Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
- Dominik Metzler
- Chen Li
- et al.
- 2016
- JVSTA
Application of cyclic fluorocarbon/argon discharges to device patterning
- Dominik Metzler
- Kishore Uppireddi
- et al.
- 2016
- JVSTA
Challenges of tailoring surface chemistry and plasma/surface interactions to advance atomic layer etching
- Sebastian U. Engelmann
- Robert L. Bruce
- et al.
- 2015
- ECS J. Solid State Sci. Technol.
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
Fabrication of sub-20 nm nanopore arrays in membranes with embedded metal electrodes at wafer scales
- Jingwei Bai
- Deqiang Wang
- et al.
- 2014
- Nanoscale