High Performance Nanosheet Technology Optimized for 77 K
- R. Bao
- L. Qin
- et al.
- 2023
- IEDM 2023
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14 results for Carl Radens
A universal hardware-driven PVT and layout-aware predictive failure analytics for SRAM
- Rajiv V. Joshi
- Sudesh Saroop
- et al.
- 2016
- IEEE Transactions on VLSI Systems
Super fast physics-based methodology for accurate memory yield prediction
- Rajiv V. Joshi
- Keunwoo Kim
- et al.
- 2015
- IEEE Transactions on VLSI Systems
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Embedded memory considerations in SOI
- G. Wang
- Carl Radens
- et al.
- 2010
- IEEE International SOI Conference 2010
A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate
- J. Yuan
- V. Chan
- et al.
- 2008
- ICSICT 2008
A sub-600-mV, fluctuation tolerant 65-nm CMOS SRAM array with dynamic cell biasing
- Azeez J. Bhavnagarwala
- Stephen Kosonocky
- et al.
- 2008
- IEEE Journal of Solid-State Circuits
Characterization of Across-device Linewidth Variation (ADLV) for 65 nm logic SRAM using CDSEM and linewidth roughness algorithms
- W. Chu
- C. Radens
- et al.
- 2006
- SPIE Advanced Lithography 2006
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005
Fluctuation limits & scaling opportunities for CMOS SRAM cells
- Azeez Bhavnagarwala
- Stephen Kosonocky
- et al.
- 2005
- IEDM 2005