Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- ESSDERC 2013
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23 results for Emanuele Uccelli
Physical and electrical properties of scaled gate stacks on Si/passivated In0.53Ga0.47As
- Chiara Marchiori
- Mario El Kazzi
- et al.
- 2013
- ECS Transactions
Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2012
- DRC 2012
Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
- Kristy J. Kormondy
- Stefan Abel
- et al.
- 2015
- Microelectronic Engineering
Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- V. Djara
- Marilyne Sousa
- et al.
- 2015
- Microelectronic Engineering
Electrical characterisation of InGaAs on insulator structures
- K. Cherkaoui
- Y.Y. Gomeniuk
- et al.
- 2015
- Microelectronic Engineering
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
- D. Cutaia
- Kirsten E. Moselund
- et al.
- 2015
- IEEE J-EDS
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
Nanoscale physics and defect state chemistry at amorphous-Si/In 0.53Ga0.47As interfaces
- Chiara Marchiori
- Mario El Kazzi
- et al.
- 2013
- Journal of Physics D: Applied Physics