Chiara Marchiori, Mario El Kazzi, et al.
ECS Transactions
Direct wafer bonding is one of today's leading technologies for the dense co-integration of co-planar nano-scaled SiGe p-FETs and InGaAs n-FETs for future low power CMOS application. This paper reports on the fabrication of large-scale InGaAs on insulator substrates, addressing the challenges associated with wafer bonding of InGaAs. It then demonstrates that hybrid dual-channel substrates can also be fabricated by direct wafer bonding with stacked ultra-thin high-mobility layers. These hybrid substrates enable the fabrication of InGaAs/SiGe CMOS circuits.
Chiara Marchiori, Mario El Kazzi, et al.
ECS Transactions
Emanuele Uccelli, Nicolas Daix, et al.
ITNG 2014
Lukas Czornomaz, N. Daix, et al.
IEDM 2012
Clarissa Convertino, C. B. Zota, et al.
Japanese Journal of Applied Physics