Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
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9 results for Simon Dawes
Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM
- Paul Solomon
- Douglas M. Bishop
- et al.
- 2021
- IRPS 2021
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- Pouya Hashemi
- Takashi Ando
- et al.
- 2016
- VLSI Technology 2016
High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2016
- SPIE Advanced Lithography 2016
Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2015
- SPIE Advanced Lithography 2015
Trilayer process for T -gate and Γ-gate lithography using ternary developer and proximity effect correction superposition
- Leonidas E. Ocola
- James Bucchignano
- et al.
- 2022
- Journal of Vacuum Science and Technology B
Gel-on-a-chip: Continuous, velocity-dependent DNA separation using nanoscale lateral displacement
- Benjamin Wunsch
- Sung-Cheol Kim
- et al.
- 2019
- Lab on a Chip
Graphene radio frequency devices on flexible substrate
- Wenjuan Zhu
- Damon B. Farmer
- et al.
- 2013
- Applied Physics Letters