SOI lateral bipolar transistor with drive current >3mA/μm
J. Cai, Tak H. Ning, et al.
S3S 2013
Graphene is a very promising candidate for applications in flexible electronics due to its high carrier mobility and mechanical flexibility. In this paper, we present results on graphene RF devices fabricated on polyimide substrates with cutoff frequencies as high as 10 GHz. Excellent channel mobility and current saturation are observed in graphene long channel devices on polyimide. Graphene devices on polyimide also show very good temperature stability from 4.4 K to 400 K and excellent mechanical flexibility up to a bending radius of 1 mm. These demonstrated properties make graphene an excellent candidate for flexible wireless applications. © 2013 AIP Publishing LLC.
J. Cai, Tak H. Ning, et al.
S3S 2013
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE Journal of Solid-State Circuits
Mehmet Soyuer, Keith A. Jenkins, et al.
IEEE Journal of Solid-State Circuits
Damon B. Farmer, Phaedon Avouris, et al.
ACS Photonics