Epi Source-Drain Damage Mitigation During Channel Release of Stacked Nanosheet Gate-All-Around TransistorsCurtis DurfeeIvo Ottoet al.2023ECS Meeting 2023
Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around TransistorsCurtis DurfeeIvo Ottoet al.2023SSDM 2023
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around TransistorsCurtis DurfeeSubhadeep Kalet al.2021ECS Meeting 2021