Facts and Myths of Dielectric Breakdown Processes-Part I: Statistics, Experimental, and Physical Acceleration Models
- Ernest Y. Wu
- 2019
- IEEE T-ED
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Recommended Methods to Study Resistive Switching Devices
- Mario Lanza
- H.-S. Philip Wong
- et al.
- 2018
- Advanced Electronic Materials
Electron energy dissipation model of gate dielectric progressive breakdown in n- and p-channel field effect transistors
- S. Lombardo
- Ernest Y. Wu
- et al.
- 2017
- Journal of Applied Physics
Applications of clustering model to bimodal distributions for dielectric breakdown
- Ernest Y. Wu
- Ronald Bolam
- et al.
- 2017
- JVSTB
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
- Yanfeng Ji
- Chengbin Pan
- et al.
- 2016
- Applied Physics Letters
Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2013
- Applied Physics Letters
Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics
- Ernest Y. Wu
- Jordi Suñé
- 2013
- Journal of Applied Physics
Ultra-thin oxide reliability for ULSI applications
- Ernest Y. Wu
- James H. Stathis
- et al.
- 2000
- Semiconductor Science and Technology
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology