CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
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162 results for Cyril Cabral
Towards routine backside SIMS sample preparation for efficient support of advanced IC process development
- M. Hopstaken
- C. Cabral Jr.
- et al.
- 2009
- FCMN 2009
An alternative low resistance MOL technology with electroplated rhodium as contact plugs for 32nm CMOS and beyond
- I. Shao
- J.M. Cotte
- et al.
- 2007
- IITC 2007
A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gates
- S. Zafar
- Y.-H. Kim
- et al.
- 2006
- VLSI Technology 2006
Tunable Workfunction for Fully Silicied Gates (FUSI) and Proposed Mechanisms
- Y.-H. Kim
- C. Cabral Jr.
- et al.
- 2006
- VLSI-TSA 2006
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
Dual workfunction fully silicided metal gates
- C. Cabral Jr.
- J. Kedzierski
- et al.
- 2004
- VLSI Technology 2004
Crystallinity and wet etch behavior of HfO2 films grown by MOCVD
- Katherine L. Saenger
- Cyril Cabral Jr.
- et al.
- 2003
- MRS Proceedings 2003