A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2017
- IEEE JSSC
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37 results for Sangbum Kim
A Retention-Aware multilevel cell phase change memory program evaluation metric
- Win-San Khwa
- Meng-Fan Chang
- et al.
- 2016
- IEEE Electron Device Letters
Microthermal stage for electrothermal characterization of phase-change memory
- Jaeho Lee
- Sangbum Kim
- et al.
- 2011
- IEEE Electron Device Letters
Lightweight Refresh Method for PCM-based Neuromorphic Circuits
- M. Ito
- Masatoshi Ishii
- et al.
- 2018
- NANO 2018
Investigation of phase change memory confined cell endurance using transmission electron microscopy (TEM)
- Yu Zhu
- Sangbum Kim
- et al.
- 2016
- ISTFA 2016
A Double-Data-Rate 2 (DDR2) Interface Phase-Change Memory with 533MB/s Read-Write Data Rate and 37.5ns Access Latency for Memory-Type Storage Class Memory Applications
- H. Lung
- C. Miller
- et al.
- 2016
- IMW 2016
Optimization of programming current on endurance of phase change memory
- Sangbum Kim
- Pei-Ying Du
- et al.
- 2012
- VLSI-TSA 2012
Transition of memory technologies
- Sangbum Kim
- Chung H. Lam
- 2012
- VLSI-TSA 2012
Post-silicon calibration of analog CMOS using phase-change memory cells
- Cheng-Yuan Wen
- Jeyanandh Paramesh
- et al.
- 2011
- ESSCIRC 2011
A non-volatile look-up table design using PCM (phase-change memory) cells
- Cheng-Yuan Wen
- J. Li
- et al.
- 2011
- VLSI Circuits 2011