Development of Epitaxial SiGeB as a Test Vehicle to Evaluate Source-Drain Etchout during Channel Release of Gate-all-Around Devices: Topic/category: AEPM: Advanced Equipment Processes and Materials
- M. Nasseri
- C. Durfee
- et al.
- 2024
- ASMC 2024
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75 results for Juntao Li
High Performance Nanosheet Technology Optimized for 77 K
- R. Bao
- L. Qin
- et al.
- 2023
- IEDM 2023
Process Challenge in Analog Computing Hardware using Phase Change Memory (PCM)
- Victor Chan
- I. Ok
- et al.
- 2023
- ASMC 2023
Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
- N. Gong
- Malte J. Rasch
- et al.
- 2022
- IEDM 2022
Precession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET Structure
- Juntao Li
- Shogo Mochizuki
- et al.
- 2022
- ISTFA 2022
In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing
- Daniel Schmidt
- Curtis Durfee
- et al.
- 2022
- JM3
Critical Elements for Next Generation High Performance Computing Nanosheet Technology
- R. Bao
- C. Durfee
- et al.
- 2021
- IEDM 2021
Electromigration and Line R of Graphene Capped Cu Dual Damascene Interconnect
- T. Nogami
- S. Nguyen
- et al.
- 2021
- IEDM 2021
Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies
- M. Bhuiyan
- M. Kim
- et al.
- 2021
- IEDM 2021
Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices
- H. Jagannathan
- B. Anderson
- et al.
- 2021
- IEDM 2021