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Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHzVibhor JainT. Kessleret al.2014BCTM 2014
A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applicationsJohn J. PekarikJim Adkissonet al.2014BCTM 2014