Jim Adkisson, Marwan H. Khater, et al.
ECS Meeting 2012
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz fT and 360 GHz fMAX high performance SiGe HBTs, 135 GHz fT and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.
Jim Adkisson, Marwan H. Khater, et al.
ECS Meeting 2012
Alvin Joseph, Qizhi Liu, et al.
BCTM 2007
C. Michael Olsen, Lawrence F. Wagner, et al.
RFIC 2007
James B. Hannon, Hongsik Park, et al.
BCTM 2014