Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials
- Jing Li
- Binquan Luan
- et al.
- 2011
- IEDM 2011
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16 results for Jing Li
A low power phase change memory using thermally confined TaN/TiN bottom electrode
- J.Y. Wu
- Matthew Breitwisch
- et al.
- 2011
- IEDM 2011
1 Mb 0.41 μm2; 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing
- Jing Li
- Robert K. Montoye
- et al.
- 2014
- IEEE JSSC
1Mb 0.41 μm2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing
- Jing Li
- Robert Montoye
- et al.
- 2013
- VLSI Circuits 2013
1Mb 0.41 μm2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing
- Jing Li
- Robert Montoye
- et al.
- 2013
- VLSI Technology 2013
A case for small row buffers in non-volatile main memories
- Justin Meza
- Jing Li
- et al.
- 2012
- ICCD 2012
Resistance drift in phase change memory
- Jing Li
- Binquan Luan
- et al.
- 2012
- IRPS 2012
Optimization of programming current on endurance of phase change memory
- Sangbum Kim
- Pei-Ying Du
- et al.
- 2012
- VLSI-TSA 2012
Post-silicon calibration of analog CMOS using phase-change memory cells
- Cheng-Yuan Wen
- Jeyanandh Paramesh
- et al.
- 2011
- ESSCIRC 2011
Materials engineering for phase change random access memory
- Simone Raoux
- Huai-Yu Cheng
- et al.
- 2011
- NVMTS 2011