Material properties of p-type GaAs at large dopings
- Sandip Tiwari
- Steven L. Wright
- 1990
- Applied Physics Letters
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Low surface recombination velocity and contact resistance using p +/p carbon-doped GaAs structures
- T.J. De Lyon
- J.A. Kash
- et al.
- 1990
- Applied Physics Letters
Analysis of the Operation of GaAlAs/GaAs HBT's
- Sandip Tiwari
- David J. Frank
- 1989
- IEEE T-ED
Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors
- Sandip Tiwari
- D.J. Frank
- et al.
- 1988
- Journal of Applied Physics
Barrier and recombination effects in the base-emitter junction of heterostructure bipolar transistors
- Sandip Tiwari
- D.J. Frank
- 1988
- Applied Physics Letters
Electron mobility in p-type GaAs
- M.I. Nathan
- W.P. Dumke
- et al.
- 1988
- Applied Physics Letters
IVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors
- Sandip Tiwari
- David J. Frank
- et al.
- 1988
- IEEE T-ED
Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- Applied Physics Letters
DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors
- M.I. Nathan
- S. Tiwari
- et al.
- 1987
- Journal of Applied Physics
Thermally stable ohmic contacts to n-type GaAs. I. MoGeW contact metal
- Masanori Murakami
- W.H. Price
- et al.
- 1987
- Journal of Applied Physics