A New Effect at High Currents in Heterostructure Bipolar Transistors
- Sandip Tiwari
- 1988
- IEEE Electron Device Letters
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DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors
- M.I. Nathan
- S. Tiwari
- et al.
- 1987
- Journal of Applied Physics
Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAs
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- Applied Physics Letters
Thermally stable ohmic contacts to n-type GaAs. I. MoGeW contact metal
- Masanori Murakami
- W.H. Price
- et al.
- 1987
- Journal of Applied Physics
IVA-5 Refractory p-Ohmic-Contact to GaAs and GaxAl1 - xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal Furnace
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- IEEE T-ED
Symmetric-Gain, Zero-Offset, Self-Aligned, and Refractory-Contact Double HBT's
- Sandip Tiwari
- Steven L. Wright
- 1987
- IEEE Electron Device Letters
Transport and Related Properties of (Ga, Al)As/GaAs Double Heterostructure Bipolar Junction Transistors
- Sandip Tiwari
- Steven L. Wright
- et al.
- 1987
- IEEE T-ED
In situ contacts to GaAs based on InAs
- S.L. Wright
- R.F. Marks
- et al.
- 1986
- Applied Physics Letters
IIIA-2 Simulation and Analysis of Recombination and Grading Effects in GaAlAs/GaAs HBT's
- Sandip Tiwari
- David J. Frank
- 1986
- IEEE T-ED
PERFORMANCE OF HETEROSTRUCTURE FET'S IN LSI.
- S. Tiwari
- 1986
- IEEE T-ED