A 27 GHz 20 ps PNP technology
- J. Warnock
- P.F. Lu
- et al.
- 1989
- IEDM 1989
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76 results for John D. Cressler
Low-temperature operation of silicon bipolar ECL circuits
- J.D. Cressler
- D.D. Tang
- et al.
- 1989
- ISSCC 1989
Electron beam damage of advanced silicon bipolar transistors and circuits
- Keith A. Jenkins
- J.D. Cressler
- 1988
- IEDM 1988
Sub-50 ps single poly planar bipolar technology
- T.C. Chen
- D.D. Tang
- et al.
- 1988
- IEDM 1988
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- Suraj J. Mathew
- Guofu Niu
- et al.
- 1999
- IEEE Electron Device Letters
An Epitaxial Emitter-Cap SiGe-Base Bipolar Technology Optimized for Liquid-Nitrogen Temperature Operation
- John D. Cressler
- Emmanuel F. Crabbé
- et al.
- 1994
- IEEE Electron Device Letters
Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors
- Emmanuel F. Crabbé
- John D. Cressler
- et al.
- 1993
- IEEE Electron Device Letters
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
73-GHz Self-Aligned SiGe-Base Bipolar Transistors with Phosphorus-Doped Polysilicon Emitters
- Emmanuel F. Crabbé
- James H. Comfort
- et al.
- 1992
- IEEE Electron Device Letters