Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling
- Sokrates T. Pantelides
- L. Tsetseris
- et al.
- 2009
- ECS Meeting 2009
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12 results for Daniel M. Fleetwood
Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation
- J.A. Felix
- H.D. Xiong
- et al.
- 2003
- INFOS 2003
Radiation-Induced Charge Trapping in Thin Al2O 3/SiOxNy/Si(100) Gate Dielectric Stacks
- J.A. Felix
- M.R. Shaneyfelt
- et al.
- 2003
- IEEE TNS
Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability
- Rajan Arora
- Zachary E. Fleetwood
- et al.
- 2014
- IEEE TNS
Trade-offs between RF performance and total-dose tolerance in 45-nm RF-CMOS
- Rajan Arora
- En Xia Zhang
- et al.
- 2011
- IEEE TNS
The radiation tolerance of strained Si/SiGe n-MODFETs
- Anuj Madan
- Bongim Jun
- et al.
- 2007
- IEEE TNS
X-ray irradiation and bias effects in fully-depleted and partially-depleted SiGe HBTs fabricated on CMOS-compatible SOI
- Marco Bellini
- Bongim Jun
- et al.
- 2006
- IEEE TNS
Bias-temperature instabilities and radiation effects in MOS devices
- X.J. Zhou
- D.M. Fleetwood
- et al.
- 2005
- IEEE TNS
Charge trapping and annealing in high-k gate dielectrics
- James A. Felix
- Marty R. Shaneyfelt
- et al.
- 2004
- IEEE TNS
Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics
- X.J. Zhou
- L. Tsetseris
- et al.
- 2004
- Applied Physics Letters