A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
- John J. Pekarik
- Jim Adkisson
- et al.
- 2014
- BCTM 2014
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8 results for Jim Adkisson
A novel approach to isolating the edge of the shallow trench isolation in SiGe HBTs for improved device performance
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitance
- Q. Liu
- Jim Adkisson
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T/fMAX through reduced Rb and Ccb parasitics
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2013
- BCTM 2013
Improved frequency response in a SiGe npn device through improved dopant activation
- Jim Adkisson
- Marwan H. Khater
- et al.
- 2012
- ECS Meeting 2012
A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOS
- Q. Liu
- Jim Adkisson
- et al.
- 2012
- ECS Meeting 2012
High performance 0.13 μm SOI CMOS technology with Cu interconnects and low-k BEOL dielectric
- P. Smeys
- V. McGahay
- et al.
- 2000
- VLSI Technology 2000
High-performance sub-0.25 μm CMOS technology with multiple thresholds and copper interconnects
- L. Su
- R. Schulz
- et al.
- 1998
- VLSI Technology 1998