A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applicationsJohn J. PekarikJim Adkissonet al.2014BCTM 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitanceQ. LiuJim Adkissonet al.2014ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T/fMAX through reduced Rb and Ccb parasiticsRenata Camillo-CastilloQ. Liuet al.2013BCTM 2013
A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOSQ. LiuJim Adkissonet al.2012ECS Meeting 2012