A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applicationsJohn J. PekarikJim Adkissonet al.2014BCTM 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitanceQ. LiuJim Adkissonet al.2014ECSSMEQ 2014