A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applicationsJohn J. PekarikJim Adkissonet al.2014BCTM 2014
A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, f T/fMAX of 15/14 GHz VPNP, and fT/f MAX of 60/125 GHz HBTP. CandraM. Dahlströmet al.2008BCTM 2008
Line edge roughness and spacing effect on low-k TDDB characteristicsF. ChenJ.R. Lloydet al.2008IRPS 2008
A 0.35 μm SiGe BiCMOS technology for power amplifier applicationsAlvin JosephQizhi Liuet al.2007BCTM 2007