A snapshot review of double magnetic junctions for STT-MRAM
- D.C. Worledge
- Guohan Hu
- 2023
- MRS Advances
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42 results for Guohan Hu
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
Overview and outlook of emerging non-volatile memories
- Mengwei Si
- Huai-Yu Cheng
- et al.
- 2021
- MRS Bulletin
Signature of electron-magnon Umklapp scattering in L 10FePt probed by thermoelectric measurements
- Xiaoxian Yan
- Chang Huai
- et al.
- 2021
- Applied Physics Letters
Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions
- Christopher Safranski
- Jan Kaiser
- et al.
- 2021
- Nano Letters
Reliable 5 ns writing of spin-transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2019
- IEEE Magnetics Letters
Materials for spin-transfer-torque magnetoresistive random-access memory
- Shinji Yuasa
- Kazuhiro Hono
- et al.
- 2018
- MRS Bulletin
Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
- J. J. Nowak
- Raphael P. Robertazzi
- et al.
- 2016
- IEEE Magnetics Letters
Development of perpendicularly magnetized Ta|CoFeB|MgO-based tunnel junctions at IBM (invited)
- D.C. Worledge
- G. Hu
- et al.
- 2014
- Journal of Applied Physics
Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions
- Jonathan Z. Sun
- S.L. Brown
- et al.
- 2013
- Physical Review B - CMMP