Band edge high-K /metal gate n-MOSFETs using ultra thin capping layers
- V.K. Paruchuri
- V. Narayanan
- et al.
- 2007
- VLSI-TSA 2007
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48 results for S. L. Brown
Recent advances in search for suitable high-k/metal gate solutions to replace SiON/Poly-silicon gate stacks in CMOS devices for 45nm and beyond technologies
- B.P. Linder
- V.K. Paruchuri
- et al.
- 2007
- ECS Meeting 2007
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Recent advances in MRAM technology
- W.J. Gallagher
- D.W. Abraham
- et al.
- 2005
- VLSI Technology 2005
A 0.18μm Logic-based MRAM Technology for High Performance Nonvolatile Memory Applications
- A.R. Sitaram
- D.W. Abraham
- et al.
- 2003
- VLSI Technology 2003
Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy
- J. Nowak
- R.P. Robertazzi
- et al.
- 2011
- IEEE Magnetics Letters
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
Reliable 5 ns writing of spin-transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2019
- IEEE Magnetics Letters
Materials investigation for thermally-assisted magnetic random access memory robust against 400°C temperatures
- A. Annunziata
- Philip Trouilloud
- et al.
- 2015
- Journal of Applied Physics
Development of perpendicularly magnetized Ta|CoFeB|MgO-based tunnel junctions at IBM (invited)
- D.C. Worledge
- G. Hu
- et al.
- 2014
- Journal of Applied Physics