Overshoot in transient and steady-state in GaAs, InP, Ga.47In.53As, and InAs bipolar transistors
- S. Tiwari
- M.V. Fischetti
- et al.
- 1990
- IEDM 1990
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88 results for S.E. Laux
The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors
- E.F. Crabbe
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs
- M.V. Fischetti
- S.E. Laux
- 1989
- IEDM 1989
Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors
- Wai Lee
- S.E. Laux
- et al.
- 1989
- IEDM 1989
SELF-CONSISTENT CALCULATION OF ELECTRON STATES IN NARROW CHANNELS.
- S.E. Laux
- Alan C. Warren
- 1985
- IEDM 1985
STUDY OF AVALANCHE BREAKDOWN IN SCALED N-MOSFETS.
- S.E. Laux
- F.H. Gaensslen
- 1983
- IEDM 1983
Optimum crystallographic alignment for Si n-channel ballistic DGFETs
- S.E. Laux
- 2005
- IEEE Electron Device Letters
Collector Signal Delay in the Presence of Velocity Overshoot
- Steven E. Laux
- Wai Lee
- 1990
- IEEE Electron Device Letters
Monte-Carlo Simulation of Submicrometer Si n-MOSFET's at 77 and 300 K
- Steven E. Laux
- M.V. Fischetti
- 1988
- IEEE Electron Device Letters
Capacitance oscillations in one-dimensional electron systems
- T.P. Smith III
- H. Arnot
- et al.
- 1987
- Physical Review Letters