Hao Lin, Haitao Liu, et al.
LEC 2006
We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects. © 2005 IEEE.
Hao Lin, Haitao Liu, et al.
LEC 2006
Arvind Kumar, Kai Xiu, et al.
SISPAD 2012
Jakub Kedzierski, Meikei Ieong, et al.
IEEE Transactions on Electron Devices
Steven E. Laux, Frank Stern
Applied Physics Letters