Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples
- S.E. Laux
- 2004
- Journal of Computational Electronics
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Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects
- S.E. Laux
- A. Kumar
- et al.
- 2004
- Journal of Applied Physics
Does Circulation in Individual Current States Survive in the Total Current Density?
- S.E. Laux
- A. Kumar
- et al.
- 2003
- Journal of Computational Electronics
Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
- M.V. Fischetti
- S.E. Laux
- 2001
- Journal of Applied Physics
Performance degradation of small silicon devices caused by long-range Coulomb interactions
- M.V. Fischetti
- S.E. Laux
- 2000
- Applied Physics Letters
Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
- Steven E. Laux
- Karl Hess
- 1999
- IEEE Transactions on Electron Devices
Comment on "Influence of the doping element on the electron mobility in n silicon" [J. Appl. Phys. 83, 3096 (1998)]
- M.V. Fischetti
- S.E. Laux
- 1999
- Journal of Applied Physics
On particle-mesh coupling in monte carlo semiconductor device simulation
- Steven E. Laux
- 1996
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Band structure, deformation potentials, and carrier mobility in strained Si Ge, and SiGe alloys
- M.V. Fischetti
- S.E. Laux
- 1996
- Journal of Applied Physics
Modeling effects of focused ion beams
- F. Stern
- S.E. Laux
- et al.
- 1996
- Solid-State Electronics