Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2009
- RADECS 2009
Publications
Date
Featured collections
Popular topics
6 results for Dale McMorrow
An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits
- Troy D. England
- Rajan Arora
- et al.
- 2013
- IEEE TNS
Comparison of single and two-photon absorption for laser characterization of single-event upsets in SOI SRAMs
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2011
- IEEE TNS
Evaluating the influence of various body-contacting schemes on single event transients in 45-nm SOI CMOS
- Kurt A. Moen
- Stanley D. Phillips
- et al.
- 2010
- IEEE TNS
Estimation of heavy-ion LET thresholds in advanced SOI IC technologies from two-photon absorption laser measurements
- James R. Schwank
- Marty R. Shaneyfelt
- et al.
- 2010
- IEEE TNS
Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs
- Jonathan A. Pellish
- Robert A. Reed
- et al.
- 2009
- IEEE TNS