Rajan Arora, Sachin Seth, et al.
IRPS 2011
This paper uses charge deposition by two-photon absorption to present the first investigation of the physical mechanisms underlying the single event transient (SET) response of cascode structures in a 45-nm RF-CMOS/SOI technology, provides the first experimental comparison of SET between 45-nm and 32-nm RF-CMOS/SOI devices, and presents implications for circuit design in both technologies. This work leverages a number of different device types and is supported by calibrated TCAD simulations. © 2013 IEEE.
Rajan Arora, Sachin Seth, et al.
IRPS 2011
Rajan Arora, En Xia Zhang, et al.
IEEE TNS
Anuj Madan, Jiong Jiong Mo, et al.
RADECS 2009
Rajan Arora, Zachary E. Fleetwood, et al.
IEEE TNS