An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuitsTroy D. EnglandRajan Aroraet al.2013IEEE TNS
Comparison of single and two-photon absorption for laser characterization of single-event upsets in SOI SRAMsJames R. SchwankMarty R. Shaneyfeltet al.2011IEEE TNS
Evaluating the influence of various body-contacting schemes on single event transients in 45-nm SOI CMOSKurt A. MoenStanley D. Phillipset al.2010IEEE TNS