Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectricMichael E. RamónTarik Akyolet al.2013Applied Physics Letters
Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectricDavood ShahrjerdiJunghyo Nahet al.2010Applied Physics Letters