Conference paper
New paradigms for cost-effective III-V photovoltaic technology
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge density in the channel due to significant charge trapping. The peak electron mobility was found to be relatively high (∼2140 cm2 /V s), in agreement with inherent high carrier mobility of electrons in III-V materials. © 2010 American Institute of Physics.
Davood Shahrjerdi, Stephen W. Bedell, et al.
ECS Transactions
Stephen W. Bedell, Davood Shahrjerdi, et al.
SPIE Defense + Security 2014
Bahman Hekmatshoar
AM-FPD 2015
Stephen W. Bedell, Keith Fogel, et al.
Journal of Physics D: Applied Physics