Conference paper
VLSI-enabled DNA sequencing arrays
Ritu Raj Singh, Arun Manickam, et al.
MWSCAS 2011
We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars. The Hall data reveal the existence of a reduced mobile charge density in the channel due to significant charge trapping. The peak electron mobility was found to be relatively high (∼2140 cm2 /V s), in agreement with inherent high carrier mobility of electrons in III-V materials. © 2010 American Institute of Physics.
Ritu Raj Singh, Arun Manickam, et al.
MWSCAS 2011
Davood Shahrjerdi, Stephen W. Bedell, et al.
Solid-State Electronics
Stephen W. Bedell, Keith Fogel, et al.
Journal of Physics D: Applied Physics
Chris Ebert, Ziggy Pulwin, et al.
PVSC 2012