Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
- Lukas Czornomaz
- Mario El Kazzi
- et al.
- 2012
- DRC 2012
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39 results for Heinz Siegwart
Impact of La2O3 thickness on HfO2/La 2O3/Ge capacitors and p-channel MOSFETs
- Caroline Andersson
- Marilyne Sousa
- et al.
- 2009
- ESSDERC 2009
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Growth of perovskites with crystalline interfaces on Si(100)
- G.J. Norga
- A. Guiller
- et al.
- 2003
- MRS Proceedings 2003
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
- Kristy J. Kormondy
- Stefan Abel
- et al.
- 2015
- Microelectronic Engineering
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
Heterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
- L. Czornomaz
- M. El Kazzi
- et al.
- 2012
- Solid-State Electronics
Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2012
- Applied Physics Letters
Mobility and Dit distributions for p-channel MOSFETs with HfO 2/LaGeO x passivating layers on germanium
- C. Andersson
- M.J. Süess
- et al.
- 2011
- Journal of Applied Physics