Strain engineering for silicon CMOS technology
- D.K. Sadana
- S.W. Bedell
- et al.
- 2005
- ECS Meeting 2005
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39 results for Joel P. de Souza
Ion implantation in gallium arsenide mesfet technology
- J.P. De Souza
- D.K. Sadana
- 1990
- Congress of the Brazilian Society of Microelectronics 1990
Passivation of dopants in ion implanted and rapid thermally annealed GaAs in H+ plasma environment
- J.P. de Souza
- D.K. Sadana
- et al.
- 1990
- Symposium on Process Physics and Modeling in Semiconductor Technology 1990
Diffusion-Controlled Porous Crystalline Silicon Lithium Metal Batteries
- John Collins
- Joel P. de Souza
- et al.
- 2020
- iScience
CMOS-Compatible self-aligned In0.53Ga0.47As MOSFETs with gate lengths down to 30 nm
- Amlan Majumdar
- Yanning Sun
- et al.
- 2014
- IEEE T-ED
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- J.P. De Souza
- E.W. Kiewra
- et al.
- 2008
- Applied Physics Letters
Effects of patterned, stressed SiN overlayers on Si solid phase epitaxy
- K.L. Saenger
- K.E. Fogel
- et al.
- 2008
- Applied Physics Letters
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution
- K.L. Saenger
- J.P. De Souza
- et al.
- 2008
- JES
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
A study of trench-edge defect formation in (001) and (011) silicon recrystallized by solid phase epitaxy
- K.L. Saenger
- J.P. De Souza
- et al.
- 2007
- Journal of Applied Physics