A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
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13 results for S. Mittal
High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling
- S. Bangsaruntip
- G.M. Cohen
- et al.
- 2009
- IEDM 2009
Optimization of programming current on endurance of phase change memory
- Sangbum Kim
- Pei-Ying Du
- et al.
- 2012
- VLSI-TSA 2012
Effects of Al and Mn impurities on Cu electromigration
- C.-K. Hu
- J. Ohm
- et al.
- 2011
- ADMETA 2011
Development, characterization and interface engineering of films for enhanced amorphous silicon solar cell performance
- P. Joshi
- Steven E. Steen
- et al.
- 2010
- PVSC 2010
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
- Sarunya Bangsaruntip
- A. Majumdar
- et al.
- 2010
- VLSI Technology 2010
Gate-all-around silicon nanowire MOSFETs and circuits
- Jeffrey W. Sleight
- Sarunya Bangsaruntip
- et al.
- 2010
- DRC 2010
Interface state density measurements in gated p-i-n silicon nanowires as a function of the nanowire diameter
- Guy Cohen
- E. Cartier
- et al.
- 2010
- DRC 2010
High performance and highly uniform metal hi-k gate-all-around silicon nanowire mosfets
- Jeffrey W. Sleight
- Sarunya Bangsaruntip
- et al.
- 2010
- ECS Transactions