Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices
- L.J. Huang
- K.K. Chan
- et al.
- 2000
- IEEE International SOI Conference 2000
Publications
81 results for Kevin Chan
Scheme for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
- J. Appenzeller
- R. Martel
- et al.
- 2000
- Applied Physics Letters
Ultrathin 600°C wet thermal silicon dioxide
- J. Appenzeller
- J.A. Del Alamo
- et al.
- 2000
- Electrochemical and Solid-State Letters
0.18 um modular triple self-aligned embedded split-gate flash memory
- Rebecca Mih
- Jay Harrington
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
Characterization of the silicon on insulator film in bonded wafers by high resolution X-ray diffraction
- G.M. Cohen
- P.M. Mooney
- et al.
- 1999
- Applied Physics Letters
Bonding of thin films on 200 mm silicon wafers using chemical mechanical polishing
- E.C. Jones
- S. Tiwari
- et al.
- 1998
- IEEE International SOI Conference 1998
Extendibility of Cu damascene to 0.1 μm wide interconnections
- C.-K. Hu
- K.Y. Lee
- et al.
- 1998
- MRS Spring Meeting 1998
High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT
- Clement Wann
- Fariborz Assaderaghi
- et al.
- 1997
- IEEE Electron Device Letters
Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel
- H.-S. Wong
- K.K. Chan
- et al.
- 1997
- IEDM 1997
New complimentary metal-oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates
- S. Rishton
- K. Ismail
- et al.
- 1997
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures