New layout dependency in high-k/metal gate MOSFETs
- M. Hamaguchi
- Deleep R. Nair
- et al.
- 2011
- IEDM 2011
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6 results for H.V. Meer
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
(110) Channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (R ext) engineering
- B. Yang
- A. Waite
- et al.
- 2007
- IEDM 2007
High performance bulk planar 20nm CMOS technology for low power mobile applications
- Huiling Shang
- Sameer Jain
- et al.
- 2012
- VLSI Technology 2012
Performance elements for 28nm gate length bulk devices with gate first high-k metal gate
- Jun Yuan
- C. Gruensfelder
- et al.
- 2010
- ICSICT 2010
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005