Polymer chemistry considerations in the design of robust 193 nm photoresists
- R.D. Allen
- Hiroshi Ito
- et al.
- 1999
- ACS Spring 1999
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26 results for Tom Wallow
Mechanistic studies on the aryl-aryl interchange reaction of ArPdL2I (L = triarylphosphine) complexes
- Felix E. Goodson
- Thomas I. Wallow
- et al.
- 1997
- JACS
EUV OPC for 56 nm metal pitch
- Martin Burkhardt
- Matt Colburn
- et al.
- 2011
- SPIE Advanced Lithography 2011
Revisit pattern collapse for 14nm node and beyond
- Kenji Yoshimoto
- Craig Higgins
- et al.
- 2011
- SPIE Advanced Lithography 2011
Exposure tool settings and OPC strategies for EUV Lithography at the 16nm node
- Yunfei Deng
- Jongwook Kye
- et al.
- 2009
- SPIE Advanced Lithography 2009
Initial experience establishing a EUV baseline lithography process for manufacturability assessment
- O.R. Wood II
- D. Back
- et al.
- 2007
- SPIE Advanced Lithography 2007
193-nm negative resist based on acid-catalyzed elimination of polar molecules
- R. Sooriyakumaran
- B. Davis
- et al.
- 2004
- Microlithography 2004
Characterization of the polymer-developer interface in 193 nm photoresist polymers and formulations during dissolution
- Thomas Wallow
- Wendy Chan
- et al.
- 2002
- Microlithography 2002
Dissolution/swelling behavior of cycloolefin polymers in aqueous base
- Hiroshi Ito
- R.D. Allen
- et al.
- 2000
- Microlithography 2000
Molecular weight tailoring in methacrylate 193 nm photoresists
- Thomas I. Wallow
- P.J. Brock
- et al.
- 1999
- SPIE Advances in Resist Technology and Processing 1999