EUV OPC for 56 nm metal pitch
- Martin Burkhardt
- Matt Colburn
- et al.
- 2011
- SPIE Advanced Lithography 2011
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26 results for Tom Wallow
Revisit pattern collapse for 14nm node and beyond
- Kenji Yoshimoto
- Craig Higgins
- et al.
- 2011
- SPIE Advanced Lithography 2011
Exposure tool settings and OPC strategies for EUV Lithography at the 16nm node
- Yunfei Deng
- Jongwook Kye
- et al.
- 2009
- SPIE Advanced Lithography 2009
Are extreme ultraviolet resists ready for the 32 nm node?
- Karen Petrillo
- Yayi Wei
- et al.
- 2007
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Initial experience establishing a EUV baseline lithography process for manufacturability assessment
- O.R. Wood II
- D. Back
- et al.
- 2007
- SPIE Advanced Lithography 2007
193-nm negative resist based on acid-catalyzed elimination of polar molecules
- R. Sooriyakumaran
- B. Davis
- et al.
- 2004
- Microlithography 2004
Characterization of the polymer-developer interface in 193 nm photoresist polymers and formulations during dissolution
- Thomas Wallow
- Wendy Chan
- et al.
- 2002
- Microlithography 2002
193nm single layer resist materials: Total consideration on design, physical properties, and lithographic performances on all major alicyclic platform chemistries
- T. Kajita
- Y. Nishimura
- et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering
Novel classes of cyclic olefin polymers for 193 nm lithography
- P. Rao Varanasi
- R.D. Allen
- et al.
- 2001
- J. Photopolym. Sci. Tech.
Dissolution/swelling behavior of cycloolefin polymers in aqueous base
- Hiroshi Ito
- R.D. Allen
- et al.
- 2000
- Microlithography 2000