Body voltage and history effect sensitivity to key device parameters in 90nm PD-SOI
- S. Kawanaka
- M.B. Ketchen
- et al.
- 2004
- IEEE International SOI Conference 2004
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34 results for M. Sherony
A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2004
- IEEE Journal of Solid-State Circuits
PD/SOI SRAM performance in presence of gate-to-body tunneling current
- Rajiv V. Joshi
- Ching-Te Chuang
- et al.
- 2003
- IEEE Transactions on VLSI Systems
A Power-Optimized Widely-Tunable 5-GHz Monolithic VCO in a Digital SOI CMOS Technology on High Resistivity Substrate
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- ISLPED 2003
A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ESSCIRC 2003
Highly Manufacturable 40-50 GHz VCOs in a 120nm System-on-Chip SOI Technology
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- IEDM 2003
3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- VLSI Circuits 2003
A 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology
- J.O. Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- RFIC 2003