IIA-3 113-GHz fT Graded-Base SiGe HBT's
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEEE Transactions on Electron Devices
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148 results for Jack O. Chu
Erbium-doped silicon prepared by UHV/CVD
- D.B. Beach
- R.T. Collins
- et al.
- 1992
- MRS Proceedings 1992
Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
- Stefan Zollner
- R.T. Collins
- et al.
- 1992
- SPIE Semiconductors 1992
High-Transconductance n-Type Si/SiGe Modulation-Doped Field-Effect Transistors
- K. Ismail
- B.S. Meyerson
- et al.
- 1992
- IEEE Electron Device Letters
Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
- S. Nelson
- K. Ismail
- et al.
- 1992
- Applied Physics Letters
Quantum yield studies of disilane photodissociation at 193 nm by infrared diode laser spectroscopy
- J.O. Chu
- M.H. Begemann
- et al.
- 1989
- Chemical Physics Letters
Absolute rate constants for silylene reactions with diatomic molecules
- J.O. Chu
- D.B. Beach
- et al.
- 1988
- Chemical Physics Letters
Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilane
- Joseph M. Jasinski
- Jack O. Chu
- 1988
- The Journal of Chemical Physics