Germanium-on-SOI infrared detectors for integrated photonic applications
- Steven J. Koester
- Jeremy D. Schaub
- et al.
- 2006
- IEEE Journal on Selected Topics in Quantum Electronics
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148 results for Jack O. Chu
Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
- K.A. Slinker
- K.L.M. Lewis
- et al.
- 2005
- New Journal of Physics
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
High-speed Germanium-on-SOI lateral PIN photodiodes
- G. Dehlinger
- S.J. Koester
- et al.
- 2004
- IEEE Photonics Technology Letters
Spin-based quantum dot quantum computing in silicon
- Mark A. Eriksson
- Mark Friesen
- et al.
- 2004
- Quantum Information Processing
Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructures
- J. Cai
- P.M. Mooney
- et al.
- 2004
- Journal of Applied Physics
Coulomb blockade in a silicon/silicon-germanium two-dimensional electron gas quantum dot
- L.J. Klein
- K.A. Slinker
- et al.
- 2004
- Applied Physics Letters
Elastic strain relaxation in free-standing SiGe/Si structures
- P.M. Mooney
- G.M. Cohen
- et al.
- 2004
- Applied Physics Letters
80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters