Preparation of 200 mm silicon substrates with metal ground-plane for double-gate SOI devices
- L.J. Huang
- K.K. Chan
- et al.
- 2000
- IEEE International SOI Conference 2000
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94 results for Fenton R. McFeely
Low temperature selective area chemical vapor deposition of gold films: Growth and characterization
- P.F. Seidler
- S.P. Kowalczyk
- et al.
- 1992
- MRS Proceedings 1992
Atomic layer epitaxy of silicon by dichlorosilane studied with core level spectroscopy
- J.A. Yarmoff
- D.K. Shuh
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
MODEL SYSTEMS IN THE STUDY OF ETCHING MECHANISMS.
- F.R. McFeely
- J.F. Morar
- et al.
- 1986
- Symposium on Plasma Processing 1986
A simple in situ method to detect graphene formation at SiC surfaces
- Satoshi Oida
- James B. Hannon
- et al.
- 2011
- Applied Physics Letters
X-ray photoelectron spectroscopy study on Fe and Co catalysts during the first stages of ethanol chemical vapor deposition for single-walled carbon nanotube growth
- Satoshi Oida
- Fenton R. McFeely
- et al.
- 2011
- Journal of Applied Physics
Decoupling graphene from SiC(0001) via oxidation
- Satoshi Oida
- Fenton R. McFeely
- et al.
- 2010
- Physical Review B - CMMP
Selective chemical vapor deposition-grown Ru for Cu interconnect capping applications
- C.-C. Yang
- Fenton R. McFeely
- et al.
- 2010
- Electrochemical and Solid-State Letters
Reliability of MOS devices with tungsten gates
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- Microelectronic Engineering
Liner materials for direct electrodeposition of Cu
- M.W. Lane
- C.E. Murray
- et al.
- 2003
- Applied Physics Letters