Low-temperature selective-area deposition of metals: Chemical vapor deposition of gold from ethyl(trimethylphosphine)gold(I)
- M.M. Banaszak Holl
- P.F. Seidler
- et al.
- 1993
- Applied Physics Letters
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94 results for Fenton R. McFeely
Impact ionization in silicon
- E. Cartier
- M.V. Fischetti
- et al.
- 1993
- Applied Physics Letters
The chemisorption and reaction of GeCl4 with Si(100)
- D.A. Lapiano-Smith
- F.R. McFeely
- 1993
- Thin Solid Films
X-ray photoelectron spectroscopic studies of chemical vapor deposition with TaF5 precursor on polyimide surfaces
- D. Ugolini
- S.P. Kowalczyk
- et al.
- 1992
- Journal of Applied Physics
A mechanism for diborane induced selectivity loss in the chemical vapor deposition of silicon from SiH2Cl2
- D.A. Lapiano-Smith
- F.R. McFeely
- 1992
- Journal of Applied Physics
The chemisorption and reaction of BCl3 with Si(111)
- D.A. Lapiano-Smith
- F.R. McFeely
- 1992
- Journal of Applied Physics
Photoelectron spectroscopy studies of chemical vapor deposition of Ta from a TaF5 precursor on Si and SiO2 substrates
- D. Ugolini
- S.P. Kowalczyk
- et al.
- 1991
- Journal of Applied Physics
Hot-electron dynamics in SiO2 studied by soft-x-ray-induced core-level photoemission
- E. Cartier
- F.R. McFeely
- 1991
- Physical Review B
Pressure dependence of oxide growth rate on silicon and metal silicides
- L.J Terminello
- J.A Yarmoff
- et al.
- 1991
- Surface Science
Comparison of the selective adsorption and reactivity behavior of WF 6 and TaF5 on SiO2 and polyimide surfaces
- F.R. McFeely
- L.J. Terminello
- et al.
- 1990
- Applied Physics Letters