Novel mechanism for tunneling and breakdown of thin SiO2 films
- B. Ricco
- M.Ya. Azbel
- et al.
- 1983
- Physical Review Letters
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60 results for M.H. Brodsky
Localized states and the electronic properties of a hydrogenated defect in amorphous silicon
- D.P. Divincenzo
- J. Bernholc
- et al.
- 1983
- Physical Review B
Preservation of optical selection rules in an amorphous semiconductor
- M.H. Brodsky
- D.P. DiVincenzo
- 1983
- Physica B+C
Electronic consequences of ideal local order in amorphous Si
- M.H. Brodsky
- D.P. Di Vincenzo
- 1983
- Journal of Non-Crystalline Solids
IrSi1.75 a new semiconductor compound
- S. Petersson
- J.A. Reimer
- et al.
- 1982
- Journal of Applied Physics
Dispersive transport and recombination lifetime in phosphorus-doped hydrogenated amorphous silicon
- J.M. Hvam
- M.H. Brodsky
- 1981
- Physical Review Letters
Thickness dependent conductivity of n-type hydrogenated amorphous silicon
- D. Ast
- M.H. Brodsky
- 1980
- Journal of Non-Crystalline Solids
The temperature dependence of the refractive index of hydrogenated amorphous silicon and implications for electroreflectance experiments
- M.H. Brodsky
- P.A. Leary
- 1980
- Journal of Non-Crystalline Solids
Thickness-dependent conductivity and photoconductivity of hydrogenated amorphous silicon
- M.H. Brodsky
- F. Evangelisti
- et al.
- 1980
- Solar Cells
Quantum well model of hydrogenated amorphous silicon
- M.H. Brodsky
- 1980
- Solid State Communications